Analytic evaluation of diffused impurity layers in silicon

An analytic method is outlined for the calculation of average conductivity of diffused layers in silicon for a complementary error function and Gaussian impurity profiles and the results are found to be in good agreement with those obtained by the numerical integration method. It is shown that the results for Gaussian distribution are obtained directly from the derivations for an error-function distribution. The method is also useful for the estimation of the temperature coefficient of the diffused layers.