• DocumentCode
    908265
  • Title

    Influence of ionising irradiation on the channel mobility of MOS transistors

  • Author

    Bellaouar, A. ; Sarrabayrouse, G. ; Rossel, P.

  • Author_Institution
    Centre National de la Recherche Scientifique, Laboratoire d´´Automatique et d´´Analyse des Systÿmes, Toulouse, France
  • Volume
    132
  • Issue
    4
  • fYear
    1985
  • fDate
    8/1/1985 12:00:00 AM
  • Firstpage
    184
  • Lastpage
    186
  • Abstract
    The influence of an ionising irradiation on the channel mobility of a MOS transistor is experimentally investigated as a function of both the oxide layer thickness and the electric field in the insulating layer during irradiation. The previously proposed empirical formula for the dependency of the low field mobility on the created charge is made more precise.
  • Keywords
    carrier mobility; insulated gate field effect transistors; radiation effects; MOS transistors; channel mobility; electric field; ionising irradiation; low field mobility; oxide layer thickness;
  • fLanguage
    English
  • Journal_Title
    Solid-State and Electron Devices, IEE Proceedings I
  • Publisher
    iet
  • ISSN
    0143-7100
  • Type

    jour

  • DOI
    10.1049/ip-i-1.1985.0040
  • Filename
    4643944
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=908265