A novel Schottky/2-DEG diode for millimeter- and submillimeter-wave multiplier applications

Author

Peatman, W.C.B. ; Crowe, Thomas W. ; Shur, Michael

Author_Institution

Dept. of Electr. Eng., Virginia Univ., Charlottesville, VA, USA

Volume

13

Issue

1

fYear

1992

Firstpage

11

Lastpage

13

Abstract

A high-frequency diode is proposed for use as a frequency multiplier element in the millimeter- and submillimeter-wavelength regions. The Schottky/2-DEG diode utilizes a Schottky contact along the edge of a two-dimensional electron gas (2-DEG) structure. This geometry allows one to combine a very low series resistance due to the excellent transport properties of the 2-DEG with a high breakdown voltage caused by the 2-D electric field spreading in the depletion region (compared to a 1-D field variation in the conventional Schottky diode). The higher Fermi velocity of the 2-DEG leads to a less severe transit-time limitation of the frequency response.<>

Keywords

Schottky-barrier diodes; frequency multipliers; solid-state microwave devices; 2-D electric field; 2-DEG; EHF; Fermi velocity; Schottky contact; Schottky/2-DEG diode; THF; breakdown voltage; frequency multiplier element; millimeter wave devices; series resistance; sub millimeter wave devices; transit-time limitation; two-dimensional electron gas; Capacitors; Contact resistance; Cutoff frequency; Electric resistance; Electrons; Geometry; Power system harmonics; Schottky barriers; Schottky diodes; Varactors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.144935

Filename

144935