Fluorine diffusion on a polysilicon grain boundary network in relation to boron penetration from P/sup +/ gates

Author

Tseng, Hsing-Huang ; Orlowski, Marius ; Tobin, Philip J. ; Hance, Robert L.

Author_Institution

Motorola Inc., Austin, TX, USA

Volume

13

Issue

1

fYear

1992

Firstpage

14

Lastpage

16

Abstract

The combined effect of boron penetration and fluorine transport from P/sup +/ polycrystalline gates on flat-band voltage is studied. The SIMS concentration depth profiles elucidate the effect of annealing temperature on the fluorine transport, which in turn affects the boron penetration induced change in flat-band voltage. The fluorine diffusion in the poly gate is dominated by grain boundary diffusion. The identification of this mechanism is supported by SIMS profiles and a simulation based on a new methodology of network diffusion.<>

Keywords

annealing; boron; doping profiles; elemental semiconductors; fluorine; grain boundary diffusion; secondary ion mass spectra; semiconductor doping; silicon; B penetration; F diffusion; SIMS profiles; Si:B, F; annealing temperature effect; concentration depth profiles; flat-band voltage change; grain boundary diffusion; polycrystalline Si gates; polysilicon grain boundary network; semiconductor; Amorphous materials; Amorphous silicon; Annealing; Boron; Channel bank filters; Grain boundaries; Intelligent networks; Temperature; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.144936

Filename

144936