• DocumentCode
    908416
  • Title

    Modelling of short-channel m.o.s. transistors

  • Author

    Armstrong, G.A. ; Magowan, J.A.

  • Author_Institution
    Queen´s University of Belfast, Department of Electrical Engineering, Belfast, UK
  • Volume
    6
  • Issue
    10
  • fYear
    1970
  • Firstpage
    313
  • Lastpage
    315
  • Abstract
    The effects of both the bulk charge due to the drain depletion region and the saturation of carrier velocity on the current/voltage characteristics of short-channel m.o.s.t.s are considered. Theoretical calculations based on both 2-dimensional and 1-dimensional models show close agreement with experimental measurements.
  • Keywords
    field effect transistors; metal-insulator-semiconductor devices; semiconductor device models;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19700220
  • Filename
    4234713
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=908416