Title :
Modelling of short-channel m.o.s. transistors
Author :
Armstrong, G.A. ; Magowan, J.A.
Author_Institution :
Queen´s University of Belfast, Department of Electrical Engineering, Belfast, UK
Abstract :
The effects of both the bulk charge due to the drain depletion region and the saturation of carrier velocity on the current/voltage characteristics of short-channel m.o.s.t.s are considered. Theoretical calculations based on both 2-dimensional and 1-dimensional models show close agreement with experimental measurements.
Keywords :
field effect transistors; metal-insulator-semiconductor devices; semiconductor device models;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19700220
