C.W. operation of l.s.a. oscillators in R band

C.W. fundamental oscillations in the frequency range 30¿40 GHz with an output power of 120 mW were observed on devices fabricated from an epitaxial n++¿n¿n+ layered wafer of GaAs. Conversion efficiencies of up to 7% were observed. The optimum bias voltage was seen to be about 4.5¿5.5 times the threshold voltage for the best r.f. output in our circuit. Effects of bias voltage and tuning conditions on power output and frequency are described.