DocumentCode
908495
Title
Material Characterization and Ultimate Performance Calculations of Compensated n-Type Silicon Bolometer Detectors at Liquid-Helium Temperatures
Author
Summers, C.J. ; Zwerdling, S.
Volume
22
Issue
12
fYear
1974
fDate
12/1/1974 12:00:00 AM
Firstpage
1009
Lastpage
1013
Abstract
The dependence of the resistivity and far infrared (FIR) absorptance on donor concentration, compensation, and temperature in compensated n-type Si is reported. The effect of environment, time constant, and spectral passband on the noise equivalent power (NEP) of the compensated Si bolometer is examined and compared with similar calculations for the compensated Ge bolometer.
Keywords
Bolometers; Conductivity; Detectors; Josephson junctions; Neodymium; Silicon; Superconducting materials; Superconducting photodetectors; Temperature dependence; Thermal resistance;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1974.1128415
Filename
1128415
Link To Document