A novel depletion-gate amorphous silicon thin-film transistor

Author

Wu, Biing-Seng ; Cheng, Jia-Shyong ; Tsai, Hsiung-Kuang ; Lin, Tung-Liang ; Weng, Tzung-Szu ; Lin, Wen-Jian ; Chen, Hsiung-Ku

Author_Institution

Ind. Technol. Res. Inst., Hsinchu, Taiwan

Volume

13

Issue

1

fYear

1992

Firstpage

17

Lastpage

19

Abstract

A novel type of amorphous silicon (a-Si) thin-film transistor (TFT) in which a depletion gate is added to the top of the second nitride layer of a conventional a-Si TFT has been fabricated. In this transistor, switching is done by the depletion gate instead of the accumulation gate as in conventional a-Si TFTs. The pinch-off voltage and ON-OFF current ratio of the transistor can be changed by the accumulation gate bias. The transistor exhibits high ON-OFF current ratio, low contact resistance, and low gate-source capacitance.<>

Keywords

amorphous semiconductors; insulated gate field effect transistors; thin film transistors; TFT; accumulation gate bias; amorphous Si; contact resistance; depletion-gate thin film transistor; gate-source capacitance; on off current ratio; pinch-off voltage; Amorphous silicon; Contact resistance; Electrodes; Liquid crystal displays; Liquid crystals; Parasitic capacitance; Silicon compounds; Switching circuits; Thin film transistors; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.144937

Filename

144937