• DocumentCode
    908583
  • Title

    Experimental verification of a design methodology for torsion actuators based on a rapid pull-in solver

  • Author

    Bochobza-Degani, Ofir ; Nemirovsky, Yael

  • Author_Institution
    Electr. Eng. Dept., Technion-Israel Inst. of Technol., Haifa, Israel
  • Volume
    13
  • Issue
    1
  • fYear
    2004
  • Firstpage
    121
  • Lastpage
    130
  • Abstract
    In this work, an experimental and theoretical study of the effect of various geometrical parameters on the electromechanical response and pull-in parameters of torsion actuators is presented. A lumped two-degrees-of-freedom (L2DOF) pull-in model that takes into account the bending/torsion coupling, previously proposed for cantilever suspended actuators, is tailored for the torsion actuators under study. This model is shown to better capture the measured pull-in parameters than previously proposed lumped single-degree-of-freedom (L1DOF) models. The measurements were conducted on torsion actuators with various shapes, fabricated on silicon-on-insulator (SOI) wafers using deep reactive ion etching (DRIE) and flip-chip bonding. Furthermore, a novel rapid solver, for extracting the pull-in parameters of the L2DOF model of the torsion actuators, is proposed. The proposed solver is based on a Newton-Raphson scheme and the recently presented DIPIE algorithm and is shown to be ∼10 times faster than the prevalent voltage iterations based solvers. The rapid and more accurate pull-in extraction of the proposed approach renders it as a tool for extensive analysis and design optimization of torsion actuators.
  • Keywords
    Newton-Raphson method; bending; electrical engineering computing; electrostatic actuators; flip-chip devices; micromirrors; silicon-on-insulator; sputter etching; torsion; Newton-Raphson scheme; bending-torsion coupling; deep reactive ion etching; design methodology; design optimization; displacement iteration; electromechanical response; electrostatic torsion micromirrors; flip-chip bonding; geometrical parameters; lumped two-degrees-of-freedom model; rapid pull-in solver; silicon-on-insulator wafers; torsion actuators; Actuators; Design methodology; Electrostatics; Etching; Micromirrors; Semiconductor device modeling; Shape measurement; Silicon on insulator technology; Voltage; Wafer bonding;
  • fLanguage
    English
  • Journal_Title
    Microelectromechanical Systems, Journal of
  • Publisher
    ieee
  • ISSN
    1057-7157
  • Type

    jour

  • DOI
    10.1109/JMEMS.2004.824220
  • Filename
    1269738