DocumentCode :
908583
Title :
Experimental verification of a design methodology for torsion actuators based on a rapid pull-in solver
Author :
Bochobza-Degani, Ofir ; Nemirovsky, Yael
Author_Institution :
Electr. Eng. Dept., Technion-Israel Inst. of Technol., Haifa, Israel
Volume :
13
Issue :
1
fYear :
2004
Firstpage :
121
Lastpage :
130
Abstract :
In this work, an experimental and theoretical study of the effect of various geometrical parameters on the electromechanical response and pull-in parameters of torsion actuators is presented. A lumped two-degrees-of-freedom (L2DOF) pull-in model that takes into account the bending/torsion coupling, previously proposed for cantilever suspended actuators, is tailored for the torsion actuators under study. This model is shown to better capture the measured pull-in parameters than previously proposed lumped single-degree-of-freedom (L1DOF) models. The measurements were conducted on torsion actuators with various shapes, fabricated on silicon-on-insulator (SOI) wafers using deep reactive ion etching (DRIE) and flip-chip bonding. Furthermore, a novel rapid solver, for extracting the pull-in parameters of the L2DOF model of the torsion actuators, is proposed. The proposed solver is based on a Newton-Raphson scheme and the recently presented DIPIE algorithm and is shown to be ∼10 times faster than the prevalent voltage iterations based solvers. The rapid and more accurate pull-in extraction of the proposed approach renders it as a tool for extensive analysis and design optimization of torsion actuators.
Keywords :
Newton-Raphson method; bending; electrical engineering computing; electrostatic actuators; flip-chip devices; micromirrors; silicon-on-insulator; sputter etching; torsion; Newton-Raphson scheme; bending-torsion coupling; deep reactive ion etching; design methodology; design optimization; displacement iteration; electromechanical response; electrostatic torsion micromirrors; flip-chip bonding; geometrical parameters; lumped two-degrees-of-freedom model; rapid pull-in solver; silicon-on-insulator wafers; torsion actuators; Actuators; Design methodology; Electrostatics; Etching; Micromirrors; Semiconductor device modeling; Shape measurement; Silicon on insulator technology; Voltage; Wafer bonding;
fLanguage :
English
Journal_Title :
Microelectromechanical Systems, Journal of
Publisher :
ieee
ISSN :
1057-7157
Type :
jour
DOI :
10.1109/JMEMS.2004.824220
Filename :
1269738
Link To Document :
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