Title :
Mobility modulation in a quasi-one-dimensional Si-MOSFET with a dual-gate structure
Author :
Matsuoka, Hideyuki ; Ichiguchi, Tsuneo ; Yoshimura, Toshiyuki ; Takeda, Eiji
Author_Institution :
Hitachi Ltd., Tokyo, Japan
Abstract :
The electrical transport characteristics of a quasi-one-dimensional Si-MOSFET with a dual-gate structure are studied. In this device, the width of the one-dimensional channel can be changed continuously using the field effect and the intervals between one-dimensional subbands as well. By making part of the channel narrower, strong oscillations in differential conductance, even negative differential conductance, have been observed at 4.2 K, indicating the enhanced modulation of the electron mobility by inter-subband scattering suppression.<>
Keywords :
elemental semiconductors; insulated gate field effect transistors; semiconductor quantum wires; silicon; 4.2 K; Si; channel width control; dual-gate structure; electrical transport characteristics; electron mobility modulation; inter-subband scattering suppression; negative differential conductance; one dimensional subbands interval control; one-dimensional channel; quantum wire devices; quasi-one-dimensional Si-MOSFET; semiconductors; Electron mobility; Fabrication; Fluctuations; Laboratories; Particle scattering; Senior members; Temperature measurement; Threshold voltage; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
