Title :
Companding with junction f.e.t.
Author :
Flood, J.E. ; Morris, F.
Author_Institution :
University of Aston in Birmingham, Department of Electrical Engineering, Birmingham, UK
Abstract :
As companding elements, field-effect transistors have advantages over p¿n diodes; they have suitably shaped i/v characteristics which are controllable by gate bias. Tests show that a departure from linearity of compressor and expander in cascade can be corrected to have an error of less than 1%.
Keywords :
compandors; field effect transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19700243