DocumentCode :
908673
Title :
Companding with junction f.e.t.
Author :
Flood, J.E. ; Morris, F.
Author_Institution :
University of Aston in Birmingham, Department of Electrical Engineering, Birmingham, UK
Volume :
6
Issue :
11
fYear :
1970
Firstpage :
344
Lastpage :
346
Abstract :
As companding elements, field-effect transistors have advantages over p¿n diodes; they have suitably shaped i/v characteristics which are controllable by gate bias. Tests show that a departure from linearity of compressor and expander in cascade can be corrected to have an error of less than 1%.
Keywords :
compandors; field effect transistors;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19700243
Filename :
4234737
Link To Document :
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