DocumentCode
908673
Title
Companding with junction f.e.t.
Author
Flood, J.E. ; Morris, F.
Author_Institution
University of Aston in Birmingham, Department of Electrical Engineering, Birmingham, UK
Volume
6
Issue
11
fYear
1970
Firstpage
344
Lastpage
346
Abstract
As companding elements, field-effect transistors have advantages over p¿n diodes; they have suitably shaped i/v characteristics which are controllable by gate bias. Tests show that a departure from linearity of compressor and expander in cascade can be corrected to have an error of less than 1%.
Keywords
compandors; field effect transistors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19700243
Filename
4234737
Link To Document