DocumentCode
908693
Title
High-voltage high-current GTO thyristors
Author
Taylor, P.D. ; Findlay, W.J. ; Denyer, R.T.
Author_Institution
Marconi Electronic Devices Ltd., Lincoln, UK
Volume
132
Issue
6
fYear
1985
fDate
12/1/1985 12:00:00 AM
Firstpage
238
Lastpage
243
Abstract
The basic design criteria for high-power gate turn-off (GTO) thyristors are discussed. Results of a Study of the influence of the p-base on gate avalanche voltage show that only a narrow range of voltages are possible. The importance of the cell array in determining debiasing effects on the gate electrode, and its effects on gate current density, are illustrated. Finally, the switching performance of 2500 V and 4500 V GTO thyristors with varying anode shorting efficiencies is examined.
Keywords
switching; thyristors; 2500 V; 4500 V; GTO thyristors; HV type; cell array; debiasing effects; design criteria; gate avalanche voltage; gate current density; gate turn-off; high current operation; p-base; switching performance; varying anode shorting efficiencies;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Proceedings I
Publisher
iet
ISSN
0143-7100
Type
jour
DOI
10.1049/ip-i-1.1985.0053
Filename
4643988
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