DocumentCode :
908710
Title :
Material selection for efficient transferred-electron devices at Q band
Author :
Colliver, D.J. ; Gibbs, S.E. ; Taylor, B.C.
Author_Institution :
Royal Radar Establishment, Great Malvern, UK
Volume :
6
Issue :
11
fYear :
1970
Firstpage :
353
Lastpage :
355
Abstract :
A large number of measurements have been carried out on 11 different slices of GaAs and on devices fabricated from these slices. This has made it possible to establish a useful correlation between the impurity profiles of the GaAs slices and the microwave performance of devices fabricated from them.
Keywords :
III-V semiconductors; gallium arsenide; microwave devices; microwave measurement; semiconductor materials testing;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19700248
Filename :
4234742
Link To Document :
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