DocumentCode :
908718
Title :
A single 1.5-V digital chip for a 106 synapse neural network
Author :
Watanabe, Takao ; Kimura, Katsutaka ; Aoki, Masakazu ; Sakata, Takeshi ; Ito, Kiyoo
Author_Institution :
Hitachi Ltd., Tokyo, Japan
Volume :
4
Issue :
3
fYear :
1993
fDate :
5/1/1993 12:00:00 AM
Firstpage :
387
Lastpage :
393
Abstract :
A digital-chip architecture for a 106-synapse neural network is proposed. It runs on a 1.5-V dry cell to allow its use in portable equipment. An on-chip DRAM cell array stores synapse weights digitally to provide easy programmability and automatic refreshing. A pitch-matched interconnection and a combinational unit circuit for summing product allow a tight layout. A dynamic data transfer circuit and the 1.5-V operation of the entire chip reduce the power dissipation, but the parallel processing nonetheless provides high speed at the 1.5-V supply. Estimated power dissipation of 75 mW and a processing speed of 1.37 giga connections per second are predicted for the chip. The memory and the processing circuits can be integrated on a 15.4-mm×18.6-mm chip by using a 0.5-μm CMOS design rule. A scaled-down version of the chip that has an 8-kb DRAM cell array was fabricated, and its operation was confirmed
Keywords :
CMOS integrated circuits; DRAM chips; VLSI; neural chips; 0.5 micron; 75 mW; CMOS design rule; automatic refreshing; combinational unit circuit; digital-chip architecture; dynamic data transfer circuit; neural network; on-chip DRAM cell array; parallel processing; pitch-matched interconnection; portable equipment; power dissipation; programmability; summing product; synapse weights; CMOS memory circuits; CMOS process; Indium tin oxide; Integrated circuit interconnections; Neural network hardware; Neural networks; Neurons; Parallel processing; Power dissipation; Random access memory;
fLanguage :
English
Journal_Title :
Neural Networks, IEEE Transactions on
Publisher :
ieee
ISSN :
1045-9227
Type :
jour
DOI :
10.1109/72.217179
Filename :
217179
Link To Document :
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