Title :
High-performance polysilicon contacted shallow junctions formed by stacked-amorphous-silicon films
Author :
Wu, S.L. ; Lee, Chung-Len ; Lei, T.F.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
A high-performance polysilicon contacted shallow junction diode formed by using a stacked-amorphous-silicon (SAS) film as the diffusion source is reported. The diode exhibited a very low leakage current (or=100 V), and a forward ideality factor m>
Keywords :
semiconductor diodes; semiconductor doping; 100 V; breakdown voltage; diffusion source; forward ideality factor; leakage current; polycrystalline Si; polysilicon contacted shallow junction diodes; stacked amorphous Si films; Anisotropic magnetoresistance; Annealing; Atomic layer deposition; Diodes; Fabrication; Leakage current; Semiconductor films; Silicon; Substrates; Synthetic aperture sonar;
Journal_Title :
Electron Device Letters, IEEE
