• DocumentCode
    908741
  • Title

    High-performance polysilicon contacted shallow junctions formed by stacked-amorphous-silicon films

  • Author

    Wu, S.L. ; Lee, Chung-Len ; Lei, T.F.

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • Volume
    13
  • Issue
    1
  • fYear
    1992
  • Firstpage
    23
  • Lastpage
    25
  • Abstract
    A high-performance polysilicon contacted shallow junction diode formed by using a stacked-amorphous-silicon (SAS) film as the diffusion source is reported. The diode exhibited a very low leakage current (or=100 V), and a forward ideality factor m>
  • Keywords
    semiconductor diodes; semiconductor doping; 100 V; breakdown voltage; diffusion source; forward ideality factor; leakage current; polycrystalline Si; polysilicon contacted shallow junction diodes; stacked amorphous Si films; Anisotropic magnetoresistance; Annealing; Atomic layer deposition; Diodes; Fabrication; Leakage current; Semiconductor films; Silicon; Substrates; Synthetic aperture sonar;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.144939
  • Filename
    144939
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=908741