Title :
One-dimensional numerical simulation of complementary power Schottky structures
Author_Institution :
University of Saarland, Faculty of Automatics, Saarbrÿcken, West Germany
fDate :
12/1/1985 12:00:00 AM
Abstract :
A short review of the history and modelling of Schottky structures is given. A one-dimensional numerical model including tunnelling and avalanche breakdown effects for the Schottky structures is described. Simulation results on complementary power Schottky structures for the three different barrier heights (data for Cr, W, Al) are carried out for DC and transient response.
Keywords :
Schottky-barrier diodes; impact ionisation; semiconductor device models; transient response; tunnelling; Al; Cr; DC response; W; avalanche breakdown effects; barrier heights; complementary power Schottky structures; impact ionisation; one-dimensional numerical model; semiconductor diodes; simulation; transient response; tunnelling;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
DOI :
10.1049/ip-i-1.1985.0056
