DocumentCode
908773
Title
The performance of high-voltage field relieved Schottky barrier diodes
Author
Fisher, C.A. ; Shannon, J.M. ; Paxman, D.H. ; Slatter, J.A.G.
Author_Institution
Philips, Research Laboratories, Redhill, UK
Volume
132
Issue
6
fYear
1985
fDate
12/1/1985 12:00:00 AM
Firstpage
257
Lastpage
260
Abstract
A Schottky barrier diode with field relief p+-rings which modify the surface field in the device is described. The leakage reduction per unit area is a function of geometry and for the smallest ring spacing amounted to a factor of approximately 10. The data were fitted to a simple theory of the field reduction expected from the geometrical considerations. The limits of the technique are discussed.
Keywords
Schottky-barrier diodes; leakage currents; Schottky barrier diodes; field relief p+-rings; geometry; high-voltage field; leakage reduction; surface field modification;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Proceedings I
Publisher
iet
ISSN
0143-7100
Type
jour
DOI
10.1049/ip-i-1.1985.0057
Filename
4643997
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