DocumentCode :
908776
Title :
The effect of neutron irradiation on the TRAPATT diode
Author :
Chaffin, R.J.
Volume :
57
Issue :
11
fYear :
1969
Firstpage :
2063
Lastpage :
2064
Abstract :
Measurements have been made of neutron irradiation effects on the trapped plasma avalanche triggered transit (TRAPATT) microwave device. Results show-that for levels up to 1015neutrons/cm2(energy > 10 keV) there is little change in the diode RF parameters. The observed degradation above this level is described.
Keywords :
Circuits; Degradation; Diodes; Neutrons; Plasma devices; Plasma measurements; Pulse measurements; Radio frequency; Temperature distribution; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1969.7462
Filename :
1449392
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=908776
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