• DocumentCode
    908792
  • Title

    Gallium arsenide on sapphire field-effect transistors

  • Author

    Waldner, Manuela

  • Volume
    57
  • Issue
    11
  • fYear
    1969
  • Firstpage
    2066
  • Lastpage
    2066
  • Abstract
    The epitaxial growth of single-crystal GaAs on an insulating sapphire substrate, recently reported, has been used in the fabrication of Schottky barrier field-effect transistors.
  • Keywords
    Conductivity; Doping; Epitaxial growth; FETs; Fabrication; Gallium arsenide; Insulation; Schottky barriers; Substrates; Voltage;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1969.7464
  • Filename
    1449394
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=908792