• DocumentCode
    908803
  • Title

    Diffusion in semiconductors

  • Author

    Hasan, Md Maodudul ; Venkateswaran, Subramanian

  • Author_Institution
    Indian Institute of Technology, Department of Electrical Engineering, Kanpur, India
  • Volume
    6
  • Issue
    12
  • fYear
    1970
  • Firstpage
    366
  • Lastpage
    367
  • Abstract
    When the concentration of diffusing impurity in a semiconductor approaches or exceeds the intrinsic concentration of electrons or holes at the temperature of diffusion, the resulting partial differential equation becomes nonlinear. A computer program has been prepared to obtain the profile of the diffused impurity for such a situation.
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19700257
  • Filename
    4234752
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=908803