A numerical analysis of the resurf diode structure

The results of a 2-dimensional numerical analysis of medium and high-voltage diode structures that incorporate a `resurf¿ field reduction layer are presented. The work illustrates the effect of surface charge on the optimisation of the design and indicates the requirements that will ensure bulk breakdown for a wide range of surface charge densities. The results are used to assess the analytical design equation presented by Appels et al., modified to take account of surface charge. A comparison is also made with results obtained from an analysis of the field limiting ring technique, and the relative performance of the two methods is assessed.