Title :
An improved energy transport model including nonparabolicity and non-Maxwellian distribution effects
Author :
Chen, Datong ; Kan, Edwin C. ; Ravaioli, Umberto ; Shu, Chi-Wang ; Dutton, Robert W.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
Abstract :
An improved energy transport model for device simulation is derived from the zeroth and second moments of the Boltzmann transport equation (BTE) and from the presumed functional form of the even part of the carrier distribution in momentum space. Energy-band nonparabolicity and non-Maxwellian distribution effects are included to first order. The model is amenable to an efficient self-consistent discretization taking advantage of the similarity between current and energy flow equations. Numerical results for ballistic diodes and MOSFETs are presented. Typical spurious velocity overshoot spikes, obtained in conventional hydrodynamic (HD) simulations of ballistic diodes, are virtually eliminated.<>
Keywords :
insulated gate field effect transistors; semiconductor device models; semiconductor diodes; Boltzmann transport equation; MOSFETs; ballistic diodes; carrier distribution; device simulation; energy band nonparabolicity; energy flow equations; energy transport model; momentum space; nonMaxwellian distribution effects; self-consistent discretization; submicron device models; Boltzmann equation; Diodes; Distribution functions; Electrons; Energy loss; High definition video; Hydrodynamics; Numerical stability; Steady-state; Tensile stress;
Journal_Title :
Electron Device Letters, IEEE
