An improved energy transport model including nonparabolicity and non-Maxwellian distribution effects

Author

Chen, Datong ; Kan, Edwin C. ; Ravaioli, Umberto ; Shu, Chi-Wang ; Dutton, Robert W.

Author_Institution

Center for Integrated Syst., Stanford Univ., CA, USA

Volume

13

Issue

1

fYear

1992

Firstpage

26

Lastpage

28

Abstract

An improved energy transport model for device simulation is derived from the zeroth and second moments of the Boltzmann transport equation (BTE) and from the presumed functional form of the even part of the carrier distribution in momentum space. Energy-band nonparabolicity and non-Maxwellian distribution effects are included to first order. The model is amenable to an efficient self-consistent discretization taking advantage of the similarity between current and energy flow equations. Numerical results for ballistic diodes and MOSFETs are presented. Typical spurious velocity overshoot spikes, obtained in conventional hydrodynamic (HD) simulations of ballistic diodes, are virtually eliminated.<>

Keywords

insulated gate field effect transistors; semiconductor device models; semiconductor diodes; Boltzmann transport equation; MOSFETs; ballistic diodes; carrier distribution; device simulation; energy band nonparabolicity; energy flow equations; energy transport model; momentum space; nonMaxwellian distribution effects; self-consistent discretization; submicron device models; Boltzmann equation; Diodes; Distribution functions; Electrons; Energy loss; High definition video; Hydrodynamics; Numerical stability; Steady-state; Tensile stress;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.144940

Filename

144940