VectorÂ¿H finite element solution of GaAs/GaAlAs rib waveguides

Author

Rahman, B.M.A. ; Davies, J.B.

Author_Institution

University College London, Department of Electronic and Electrical Engineering, London, UK

Volume

132

Issue

6

fYear

1985

fDate

12/1/1985 12:00:00 AM

Firstpage

349

Lastpage

353

Abstract

A vector H-field formulation is used here for the solution of GaAs/GaAlAs rib waveguides. The material distribution and guide cross-section can be arbitrary, and dielectric constants are lossfree but arbitrarily anisotropic. The penalty method has been used to eliminate spurious solutions and to improve eigenvector quality. The effect of using infinite elements and the influence of artificial boundary conditions has been illustrated. Computed results are given and compared with the less accurate effective-index method and scalar variational method at 1.15 Â¿m wavelength. For the finite element solutions we have introduced Aitken´s extrapolation to speed up the convergence.

Keywords

III-V semiconductors; aluminium compounds; convergence of numerical methods; finite element analysis; gallium arsenide; optical waveguides; Aitken´s extrapolation; GaAs/GaAlAs rib waveguides; III-V semiconductors; artificial boundary conditions; convergence; dielectric constants; effective-index method; eigenvector quality; guide cross-section; infinite elements; material distribution; penalty method; scalar variational method; vector H-field finite element solution;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings J

Publisher

iet

ISSN

0267-3932

Type

jour

DOI

10.1049/ip-j:19850066

Filename

4644016