• DocumentCode
    908906
  • Title

    Pulsed Double-Drift Silicon IMPATT Diodes and Their Application

  • Author

    Pfund, George ; Snapp, Craig P. ; Podell, Allen

  • Volume
    22
  • Issue
    12
  • fYear
    1974
  • fDate
    12/1/1974 12:00:00 AM
  • Firstpage
    1134
  • Lastpage
    1140
  • Abstract
    The performance and application of double-drift silicon IMPATT diodes designed for pulsed operation at frequencies between 8.5 and 18 GHz are described. Peak pulse powers greater than 18 W at 10 GHz and 13.5 W at 16.5 GHz were obtained for 800-ns pulses at a 25-percent duty cycle with the average junction-temperature, rise limited to 200°C. Conversion efficiencies were between 11 and 13.7 percent. The microwave cavity and pulsed bias circuitry are described in detail.
  • Keywords
    Capacitance; Circuits; Coaxial components; Diodes; Frequency; Impedance; Inductance; Microwave devices; Packaging; Silicon;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.1974.1128454
  • Filename
    1128454
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=908906