Title :
Pulsed Double-Drift Silicon IMPATT Diodes and Their Application
Author :
Pfund, George ; Snapp, Craig P. ; Podell, Allen
fDate :
12/1/1974 12:00:00 AM
Abstract :
The performance and application of double-drift silicon IMPATT diodes designed for pulsed operation at frequencies between 8.5 and 18 GHz are described. Peak pulse powers greater than 18 W at 10 GHz and 13.5 W at 16.5 GHz were obtained for 800-ns pulses at a 25-percent duty cycle with the average junction-temperature, rise limited to 200°C. Conversion efficiencies were between 11 and 13.7 percent. The microwave cavity and pulsed bias circuitry are described in detail.
Keywords :
Capacitance; Circuits; Coaxial components; Diodes; Frequency; Impedance; Inductance; Microwave devices; Packaging; Silicon;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1974.1128454
