DocumentCode :
908924
Title :
Auger recombination in a quantum-well-heterostructure laser
Author :
Taylor, R.I. ; Abram, R.A. ; Smith, C. ; Burt, M.G.
Author_Institution :
University of Durham, Department of Applied Physics and Electronics, Durham, UK
Volume :
132
Issue :
6
fYear :
1985
fDate :
12/1/1985 12:00:00 AM
Firstpage :
364
Lastpage :
370
Abstract :
The problem of Auger recombination of electrons and holes in a quantum-well heterostructure is considered. We derive an expression for the Auger recombination rate for the CHSH process, with the carriers involved remaining in their ground-state subbands. We make the usual approximations of parabolic isotropic bandstructures, and assume Boltzmann statistics are valid. Our results are used to obtain the ratio of the Auger recombination rates in quantum well and bulk structures, and the ratio obtained provides a useful extension of previous work. For quantum-well lasers at 1.3 ¿¿m and 1.55 ¿¿m, we find that the Auger recombination rates are similar to those found in the bulk, provided that the carrier concentrations in the quantum well and the bulk are the same.
Keywords :
Auger effect; electron-hole recombination; semiconductor junction lasers; semiconductor superlattices; 1.3 microns; 1.55 microns; Auger recombination; Boltzmann statistics; electron-hole recombination; ground-state subbands; parabolic isotropic bandstructures; quantum-well-heterostructure laser;
fLanguage :
English
Journal_Title :
Optoelectronics, IEE Proceedings J
Publisher :
iet
ISSN :
0267-3932
Type :
jour
DOI :
10.1049/ip-j.1985.0069
Filename :
4644019
Link To Document :
بازگشت