Title :
Amorphous-silicon-on-glass field emitter arrays
Author :
Gamo, H. ; Kanemaru, S. ; Itoh, J.
Author_Institution :
Electron. Res. Lab., Toppan Printing Co. Ltd., Saitama, Japan
fDate :
6/1/1996 12:00:00 AM
Abstract :
An amorphous-silicon (a-Si) field emitter array (FEA) has been fabricated on a glass substrate and characterized, At first, a 0.3-μm-thick Cr film was deposited on the glass by vacuum evaporation technique and subsequently a 1-μm-thick Si film was deposited on the Cr film by conventional RF sputtering technique with an undoped Si target at room temperature. The sputtered Si film was identified as amorphous from X-ray diffraction patterns and had a resistivity of 3-5 k/spl Omega/-cm. The FEA consists of 1-μm-high emitter tips and a gate electrode with 1.8-μm-diameter openings. This a-Si FEA with 5×5 (=25) tips exhibited a threshold voltage of 30 V and an emission current of 2 μA at a gate voltage of 100 V. Structure and emission characteristics are discussed.
Keywords :
X-ray diffraction; amorphous semiconductors; cathodes; electron field emission; elemental semiconductors; semiconductor thin films; silicon; sputter deposition; vacuum microelectronics; 1 micron; 100 V; 2 muA; 3 to 5 kohmcm; 30 V; RF sputtering technique; X-ray diffraction patterns; emission current; emitter tips; field emitter arrays; gate electrode; resistivity; threshold voltage; vacuum evaporation technique; vacuum microelectronics; Chromium; Field emitter arrays; Glass; Radio frequency; Semiconductor films; Sputtering; Substrates; Temperature; Threshold voltage; Vacuum technology;
Journal_Title :
Electron Device Letters, IEEE
