Amorphous-silicon-on-glass field emitter arrays

Author

Gamo, H. ; Kanemaru, S. ; Itoh, J.

Author_Institution

Electron. Res. Lab., Toppan Printing Co. Ltd., Saitama, Japan

Volume

17

Issue

6

fYear

1996

fDate

6/1/1996 12:00:00 AM

Firstpage

261

Lastpage

263

Abstract

An amorphous-silicon (a-Si) field emitter array (FEA) has been fabricated on a glass substrate and characterized, At first, a 0.3-μm-thick Cr film was deposited on the glass by vacuum evaporation technique and subsequently a 1-μm-thick Si film was deposited on the Cr film by conventional RF sputtering technique with an undoped Si target at room temperature. The sputtered Si film was identified as amorphous from X-ray diffraction patterns and had a resistivity of 3-5 k/spl Omega/-cm. The FEA consists of 1-μm-high emitter tips and a gate electrode with 1.8-μm-diameter openings. This a-Si FEA with 5×5 (=25) tips exhibited a threshold voltage of 30 V and an emission current of 2 μA at a gate voltage of 100 V. Structure and emission characteristics are discussed.

Keywords

X-ray diffraction; amorphous semiconductors; cathodes; electron field emission; elemental semiconductors; semiconductor thin films; silicon; sputter deposition; vacuum microelectronics; 1 micron; 100 V; 2 muA; 3 to 5 kohmcm; 30 V; RF sputtering technique; X-ray diffraction patterns; emission current; emitter tips; field emitter arrays; gate electrode; resistivity; threshold voltage; vacuum evaporation technique; vacuum microelectronics; Chromium; Field emitter arrays; Glass; Radio frequency; Semiconductor films; Sputtering; Substrates; Temperature; Threshold voltage; Vacuum technology;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.496451

Filename

496451