Controlled polarization switching in VCSELs by means of asymmetric current injection

Author

Augustin, L.M. ; Smalbrugge, E. ; Choquette, K.D. ; Karouta, F. ; Strijbos, R.C. ; Verschaffelt, G. ; Geluk, E.J. ; van de Roer, T.G. ; Thienpont, H.

Author_Institution

Group of Opto-Electron. Devices, COBRA Inter-Univ. Res. Inst., Eindhoven, Netherlands

Volume

16

Issue

3

fYear

2004

fDate

3/1/2004 12:00:00 AM

Firstpage

708

Lastpage

710

Abstract

We have investigated the potential of asymmetric current injection for polarization switching in GaAs-based intracavity contacted vertical-cavity surface-emitting lasers using two sets of p- and n-type contacts per device. When using the contacts aligned along the [11~0] crystal direction, the observed laser polarization is parallel to [110], whereas, using the contacts along the [110] crystal direction, the polarization of the laser emission switches to a direction making an angle of 25°-90° towards [110]. To overcome this peculiar result, a careful design of the contact layers in the intracavity structure is required.

Keywords

III-V semiconductors; distributed feedback lasers; gallium arsenide; laser cavity resonators; light polarisation; optical design techniques; optical materials; optical testing; p-n heterojunctions; semiconductor lasers; surface emitting lasers; GaAs; GaAs-based intracavity contacts; VCSELs; asymmetric current injection; controlled polarization switching; crystal direction; distributed feedback laser; laser emission; laser polarization; n-type contact; p-type contact; vertical-cavity surface-emitting lasers; Distributed Bragg reflectors; Distributed feedback devices; Fiber lasers; Gallium arsenide; Laser feedback; Optical fiber polarization; Optical polarization; Surface emitting lasers; Switches; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2004.823693

Filename

1269769