Title :
Electrographically patterned thin-film silicon transistors
Author :
Gleskova, H. ; Könenkamp, R. ; Wagner ; Chen, D.S.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ, USA
fDate :
6/1/1996 12:00:00 AM
Abstract :
The authors made amorphous silicon thin-film transistors on glass foil using exclusively electrophotographic printing for pattern formation, contact hole opening and device isolation. Toner masks were applied by feeding the glass substrate through a photocopier, or from laser-printed patterns on transfer paper, This all-printed patterning is an important step toward demonstrating a low-cost large-area circuit processing technology.
Keywords :
amorphous semiconductors; electrophotography; elemental semiconductors; hydrogen; isolation technology; laser beam applications; masks; printing; silicon; thin film transistors; Si:H; all-printed patterning; amorphous semiconductors; contact hole opening; device isolation; electrophotographic printing; large-area circuit processing technology; laser-printed patterns; pattern formation; thin-film transistors; toner masks; Amorphous silicon; Circuits; Glass; Isolation technology; Paper technology; Pattern formation; Printing; Semiconductor thin films; Substrates; Thin film transistors;
Journal_Title :
Electron Device Letters, IEEE
