Title :
Direct nonlinear FET parameter extraction using large-signal waveform measurements
Author :
Werthorf, A. ; van Raay, F. ; Kompa, G.
Author_Institution :
Dept. of High Frequency Eng., Kassel Univ., Germany
fDate :
5/1/1993 12:00:00 AM
Abstract :
A method that permits a direct nonlinear extraction of two FET parameters, the drain current generator, and the gate source capacitor from large-signal waveform measurements, is presented. For demonstration, the high-frequency characteristics of the nonlinear drain current generator for a GaAs MESFET and a MODFET are extracted. Significant differences between the DC and RF characteristics, are observed and interpreted.<>
Keywords :
Schottky gate field effect transistors; equivalent circuits; field effect transistors; high electron mobility transistors; semiconductor device models; solid-state microwave devices; DC characteristics; FET parameter extraction; GaAs; MESFET; MODFET; RF characteristics; direct nonlinear extraction; drain current generator; gate source capacitor; high-frequency characteristics; large-signal waveform measurements; Capacitors; Character generation; Current measurement; DC generators; FETs; Gallium arsenide; HEMTs; MESFETs; MODFETs; Parameter extraction;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
