Elimination of the sidewall defects in selective epitaxial growth (SEG) of silicon for a dielectric isolation technology

Author

Sherman, J.M. ; Neudeck, G.W. ; Denton, J.P. ; Bashir, Rumaan ; Fultz, W.W.

Author_Institution

Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA

Volume

17

Issue

6

fYear

1996

fDate

6/1/1996 12:00:00 AM

Firstpage

267

Lastpage

269

Abstract

Selective epitaxial growth (SEG) of silicon has not had widespread use as a dielectric isolation technology due to the near sidewall defects at the SiO₂/Si interface. These defects are located in the first 1-2 μm of the SEG/sidewall SiO₂ interface. Diode junctions intersecting the sidewall and 5 μm removed from the sidewall were fabricated in SEG material using thermally grown silicon dioxide (OX) and thermally nitrided thermal silicon dioxide (NOX) as the field insulating mask. Averaged over 16 devices of each type, diodes fabricated with NOX had much better low current I-V characteristics and minimum ideality factors (1.03) than diodes fabricated with OX field oxides (1.23). Junctions intersecting the NOX field insulator had nearly identical characteristics to bulk SEG.

Keywords

MIS devices; characteristics measurement; elemental semiconductors; isolation technology; masks; nitridation; semiconductor diodes; semiconductor technology; semiconductor-insulator boundaries; silicon; silicon compounds; vapour phase epitaxial growth; SiO/sub 2/-Si; dielectric isolation technology; diode junctions; field insulating mask; ideality factors; low current I-V characteristics; selective epitaxial growth; sidewall defects; thermal nitridation; Dielectrics; Diodes; Epitaxial growth; Etching; Insulation; Isolation technology; Oxidation; Silicon compounds; Switches; Thermal expansion;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.496453

Filename

496453