Title :
Highly rectifying Au-contacts on diamond-on-silicon substrate
Author :
Gluche, P. ; Wolter, S.D. ; Borst, T.H. ; Ebert, W. ; Vescan, A. ; Kohn, E.
Author_Institution :
Dept. of Electron Devices & Circuits, Ulm Univ., Germany
fDate :
6/1/1996 12:00:00 AM
Abstract :
Au Schottky diodes have been fabricated on highly oriented diamond (HOD) films, grown on silicon using AC-bias nucleation and microwave plasma chemical vapor deposition. The active layers were selectively grown and doped by solid boron source. High rectification ratios were obtained up to 500/spl deg/C in a bias voltage range up to /spl plusmn/15 V. A current density of more than 1 A/cm/sup 2/ and a breakdown field strength up to 2.0/spl middot/10/sup 6/ V/cm for point contacts has been demonstrated.
Keywords :
Schottky diodes; current density; diamond; electric breakdown; elemental semiconductors; gold; point contacts; rectification; semiconductor device metallisation; semiconductor-metal boundaries; silicon; solid-state rectifiers; substrates; wide band gap semiconductors; -15 to 15 V; 500 C; AC-bias nucleation; Au-C:B-C-Si; C; Schottky diodes; breakdown field strength; chemical vapor deposition; current density; diamond-on-silicon substrate; highly oriented diamond films; highly rectifying Au contacts; microwave plasma CVD; point contacts; rectification ratios; selectively grown active layers; solid B dopant source; Breakdown voltage; Chemical vapor deposition; Gold; Plasma chemistry; Plasma density; Plasma sources; Schottky diodes; Semiconductor films; Silicon; Solids;
Journal_Title :
Electron Device Letters, IEEE
