• DocumentCode
    908976
  • Title

    Molecular beam epitaxial GaAs/AlGaAs heterojunction bipolar transistors on

  • Author

    Li, W.Q. ; Bhattacharya, Pallab K.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
  • Volume
    13
  • Issue
    1
  • fYear
    1992
  • Firstpage
    29
  • Lastpage
    31
  • Abstract
    The authors have investigated the characteristics and reproducibility of Si-doped p-type
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; molecular beam epitaxial growth; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; silicon; substrates; 670 C; DC characteristics; GaAs substrate; GaAs:Si-AlGaAs:Si; MBE; all Si doping; characteristics; heterojunction bipolar transistors; molecular beam epitaxy; n-p-n transistors; n-type doping; p-type doping; reproducibility; semiconductors; Bonding; Doping profiles; Epitaxial growth; Gallium arsenide; Heterojunction bipolar transistors; Molecular beam applications; Molecular beam epitaxial growth; Molecular beams; Substrates; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.144941
  • Filename
    144941
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=908976