Title :
Molecular beam epitaxial GaAs/AlGaAs heterojunction bipolar transistors on
Author :
Li, W.Q. ; Bhattacharya, Pallab K.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
The authors have investigated the characteristics and reproducibility of Si-doped p-type
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; molecular beam epitaxial growth; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; silicon; substrates; 670 C; DC characteristics; GaAs substrate; GaAs:Si-AlGaAs:Si; MBE; all Si doping; characteristics; heterojunction bipolar transistors; molecular beam epitaxy; n-p-n transistors; n-type doping; p-type doping; reproducibility; semiconductors; Bonding; Doping profiles; Epitaxial growth; Gallium arsenide; Heterojunction bipolar transistors; Molecular beam applications; Molecular beam epitaxial growth; Molecular beams; Substrates; Temperature;
Journal_Title :
Electron Device Letters, IEEE
