Title :
Metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with a novel composite channels design
Author :
Chertouk, M. ; Heiss, H. ; Xu, D. ; Kraus, S. ; Klein, W. ; Bohm, G. ; Trankle, G. ; Weimann, G.
Author_Institution :
Walter-Schottky Inst., Tech. Univ. Munchen, Germany
fDate :
6/1/1996 12:00:00 AM
Abstract :
We report on fabrication and performance of novel 0.13 μm T-gate metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with composite InGaAs channels, combining the superior transport properties of In/sub 0.52/Ga/sub 0.48/As with low-impact ionization in the In/sub 0.32/Ga/sub 0.68/As subchannel. These devices exhibit excellent DC characteristics, high drain currents of 750 mA/mm, extrinsic transconductances of 600 mS/mm, combined with still very low output conductance values of 20 mS/mm, and high channel and gate breakdown voltages. The use of a composite InGaAs channels leads to excellent cut-off frequencies: fmax of 350 GHz and an fT 160 GHz at V/sub DS/=1.5 V. These are the best microwave frequency results ever reported for any FET on GaAs substrate.
Keywords :
III-V semiconductors; aluminium compounds; electric breakdown; gallium arsenide; high electron mobility transistors; impact ionisation; indium compounds; microwave field effect transistors; millimetre wave field effect transistors; 0.13 micron; 1.5 V; 160 GHz; 20 mS/mm; 350 GHz; 600 mS/mm; DC characteristics; EHF; GaAs; GaAs substrates; InAlAs-InGaAs; SHF; T-gate structure; breakdown voltages; composite InGaAs channels; composite channels design; cutoff frequencies; extrinsic transconductance; fabrication; high drain currents; low-impact ionization; metamorphic HEMT; microwave frequency; Cutoff frequency; Fabrication; Gallium arsenide; HEMTs; Indium compounds; Indium gallium arsenide; Ionization; MODFETs; Microwave FETs; Microwave frequencies;
Journal_Title :
Electron Device Letters, IEEE
