Fabrication and measurement of an experimental GaAs FET are described. Evaporated Au-Ge-Ni contacts and nickel Schottky barrier were used. Scattering parameters were measured to 1 GHz and utilized for circuit design.
Keywords :
Cadmium; Electron tubes; FETs; Gallium arsenide; Helium; Laser stability; Laser transitions; Power lasers; Reservoirs; Temperature;
