Title :
Measurements of statistical burst-noise characteristics
Author :
Mulet, J. ; Luque, Antonio ; Rodriguez, Taniana
Author_Institution :
Instituto Politécnico de Madrid, Escuela Superior Telecomunicación, Madrid, Spain
Abstract :
In a previous letter, a dislocation model of planar-silicon-transistor burst noise was proposed. The burst statistical parameters have been measured and their dependence on bias is in good agreement with the model.
Keywords :
bipolar transistors; noise measurement;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19700278
