Title :
Pulsed 1-watt heterojunction bipolar transistors at 35 GHz
Author :
Adlerstein, M.G. ; Zaitlin, M.P. ; Hoke, W. ; Tong, E. ; Jackson, G.
Author_Institution :
Raytheon Res. Div., Lexington, MA, USA
fDate :
5/1/1993 12:00:00 AM
Abstract :
High-peak-power pulsed operation of common emitter AlGaAs-GaAs HBTs, at 35 GHz is reported. A 1.0-W peak power with 2.3-dB associated gain and power-added efficiency of 28% is obtained. Small devices gave up to 43% power-added efficiency with 190-mW output at 4.8-dB gain. The pulse length was 300 ns, and the duty cycle was 33%. The device design, small-signal characteristics, and power results obtained are described.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; solid-state microwave devices; 1 W; 190 mW; 2.3 dB; 28 percent; 300 ns; 35 GHz; 4.8 dB; 43 percent; AlGaAs-GaAs; EHF; HBTs; MM-wave device; common emitter; heterojunction bipolar transistors; millimetre wave operation; pulsed operation; small-signal characteristics; Doping; Electrical resistance measurement; Feedback; Fingers; Heterojunction bipolar transistors; Laboratories; Pulse amplifiers; RF signals; Radio frequency; Silicon;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
