Title :
Taper etching of the thermal oxide layer
Author :
Choi, Y.I. ; Kim, C.K. ; Kwon, Y.S.
Author_Institution :
Ajou University, Department of Electrical Engineering and Semiconductor Research Laboratory, Seoul, South Korea
fDate :
2/1/1986 12:00:00 AM
Abstract :
Controllable taper windows in thermally grown silicon dioxide layers are produced by depositing a thin layer of silicafilm on the thermal oxide layer before chemical etching. As the densification temperature of silicafilm is varied from 175°C to 1150°C, taper angles from 3° to 40° are obtained. Fermat´ s principle of least time is employed to derive the expression for the etched profiles of the oxide layer.
Keywords :
etching; insulating thin films; semiconductor technology; silicon compounds; 175°C to 1150°C; Si substrate; SiO2; chemical etching; densification temperature; insulating thin films; semiconductor technology; taper angles; taper windows; thermal oxide layer;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
DOI :
10.1049/ip-i-1.1986.0003
