20-GHz high-efficiency AlInAs-GaInAs on InP power HEMT

Author

Matloubian, M. ; Brown, A.S. ; Nguyen, L.D. ; Melendes, M.A. ; Larson, L.E. ; Delaney, M.J. ; Thompson, M.A. ; Rhodes, R.A. ; Pence, J.E.

Author_Institution

Hughes Res. Lab., Malibu, CA, USA

Volume

3

Issue

5

fYear

1993

fDate

5/1/1993 12:00:00 AM

Firstpage

142

Lastpage

144

Abstract

A single-stage 20-GHz power amplifier was developed using a double-doped AlInAs-GaInAs-on-InP HEMT. Output power of 516 mW (0.645 W/mm) with power-added efficiency of 47.1% and 7.1-dB gain were obtained from an 800- mu m-wide device. The device had a saturated output power of more than 560 mW (0.7 W/mm). This is believed to be the highest combination of output power, power density, gain, and power-added efficiency reported for an InP-based FET at this frequency.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; microwave amplifiers; power amplifiers; power transistors; solid-state microwave circuits; solid-state microwave devices; 20 GHz; 47.1 percent; 516 mW; 560 mW; 7.1 dB; AlInAs-GaInAs-InP; InP substrate; SHF; double-doped transistor; power HEMT; power amplifier; power-added efficiency; single-stage; Epitaxial layers; Frequency; HEMTs; High power amplifiers; Indium phosphide; Power amplifiers; Power generation; Silicon; Temperature; Thermal conductivity;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.217211

Filename

217211