Title :
Excess leakage-current noise in junction field-effect transistors
Author :
Hawkins, R.J. ; Bloodworth, G.G.
Author_Institution :
University of Southampton, Department of Electronics, Southampton, UK
Abstract :
Measurements are reported of the excess gate leakage current IG in several n channel f.e.t.s, showing that IG varies exponentially with the inverse square root of the bias voltage between drain and gate. IG shows full shot noise, together with a component of the form Ign2¿IGß/f¿ where values of 1.4 and 1.6 have been found for ¿ and ß, respectively.
Keywords :
field effect transistors; leakage currents; noise;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19700282
