• DocumentCode
    909040
  • Title

    Excess leakage-current noise in junction field-effect transistors

  • Author

    Hawkins, R.J. ; Bloodworth, G.G.

  • Author_Institution
    University of Southampton, Department of Electronics, Southampton, UK
  • Volume
    6
  • Issue
    13
  • fYear
    1970
  • Firstpage
    401
  • Lastpage
    403
  • Abstract
    Measurements are reported of the excess gate leakage current IG in several n channel f.e.t.s, showing that IG varies exponentially with the inverse square root of the bias voltage between drain and gate. IG shows full shot noise, together with a component of the form Ign2¿IGß/f¿ where values of 1.4 and 1.6 have been found for ¿ and ß, respectively.
  • Keywords
    field effect transistors; leakage currents; noise;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19700282
  • Filename
    4234778
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=909040