Title :
Elimination of surface current induced failure in millimetre wave Baritt diodes
Author :
Freyer, J. ; Guettich, U. ; Claassen, M.
Author_Institution :
Technische Universitÿt Mÿnchen, Lehrstuhl fÿr Allgemeine Elektrotechnik und Angewandte Elektronik, Mÿnchen, West Germany
fDate :
2/1/1986 12:00:00 AM
Abstract :
The influence of surface charges on the current/voltage characteristics of Baritt diodes is described and an improved Baritt diode geometry avoiding surface currents is suggested which leads to sharp I/V behaviour and hence to stable oscillation conditions.
Keywords :
BARITT diodes; Schottky-barrier diodes; fault currents; 29 GHz; BARITT diodes; I/ V characteristics; MM-wave devices; SHF; Schottky contact; current/voltage characteristics; epitaxial layer; mesa structure; millimetre-wave; solid-state microwave devices; stable oscillations conditions; surface charges; surface current induced failure;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
DOI :
10.1049/ip-i-1.1986.0005
