DocumentCode
909094
Title
Elimination of surface current induced failure in millimetre wave Baritt diodes
Author
Freyer, J. ; Guettich, U. ; Claassen, M.
Author_Institution
Technische Universitÿt Mÿnchen, Lehrstuhl fÿr Allgemeine Elektrotechnik und Angewandte Elektronik, Mÿnchen, West Germany
Volume
133
Issue
1
fYear
1986
fDate
2/1/1986 12:00:00 AM
Firstpage
25
Lastpage
27
Abstract
The influence of surface charges on the current/voltage characteristics of Baritt diodes is described and an improved Baritt diode geometry avoiding surface currents is suggested which leads to sharp I/V behaviour and hence to stable oscillation conditions.
Keywords
BARITT diodes; Schottky-barrier diodes; fault currents; 29 GHz; BARITT diodes; I/ V characteristics; MM-wave devices; SHF; Schottky contact; current/voltage characteristics; epitaxial layer; mesa structure; millimetre-wave; solid-state microwave devices; stable oscillations conditions; surface charges; surface current induced failure;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Proceedings I
Publisher
iet
ISSN
0143-7100
Type
jour
DOI
10.1049/ip-i-1.1986.0005
Filename
4644040
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