Propagating avalanche position-sensitive photon detector with resolution in the micrometer and picosecond range

Author

Ripamonti, G. ; Ghioni, M. ; Cova, Sergio ; Mastrapasqua, M.

Author_Institution

Dipartmento di Fisica, Milano Univ., Italy

Volume

13

Issue

1

fYear

1992

Firstpage

35

Lastpage

37

Abstract

A position-sensitive silicon photodetector based on a new principle is introduced. The device is a special avalanche photodiode operated above the breakdown voltage. The exploited physical effect is the propagation of the avalanche perpendicularly to the electric field. The time and position (one dimension) information are extracted from the avalanche current leading edge. Experimental measurements on test structures with a position-sensitive area of 14*70 mu m are presented. Spatial resolution better than 10- mu m FWHM combined with ultrahigh sensitivity (single photon detection) and time resolution better than 100 ps are demonstrated.<>

Keywords

avalanche photodiodes; elemental semiconductors; position sensitive particle detectors; semiconductor counters; silicon; 14 micron; 70 micron; APD; Si; above breakdown voltage bias; avalanche current leading edge; avalanche photodiode; avalanche propagation; operation; photodetector; position-sensitive area; position-sensitive photon detector; semiconductors; single photon detection; spatial resolution; time resolution; Avalanche photodiodes; Data mining; Optical arrays; P-n junctions; Photodetectors; Position sensitive particle detectors; Senior members; Silicon; Spatial resolution; Testing;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.144943

Filename

144943