Title :
An infrared sensitive Ge-Te heterojunction
Abstract :
A new Ge-Te heterojunction device is described. Its small-signal-level resistance under IR excitation can be smaller than its dark resistance by a factor of at least 1000 at 77 K.
Keywords :
Antenna arrays; Displays; Heterojunctions; Light emitting diodes; Optical arrays; Optical devices; Optical films; Optical recording; Optical sensors; Phased arrays;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1969.7501
