Recovery of hot-carrier damage in reoxidized nitrided oxide MOSFET´s

Recovery of channel hot-carrier damage in reoxidized nitrided oxide (RNO) n- and p-MOSFETs is examined. It is found that recovery is substantially greater in RNO versus conventional oxide (CO) devices, particularly for p-MOSFETs. The authors believe this recovery is due to the detrapping of electrons trapped in the nitridation-induced traps near the substrate interface. The more rapid recovery of the hot-carrier damage in RNO devices will produce greater circuit lifetime improvements over conventional oxides than predicted by accelerated static high-voltage tests.<>