Dual-gate operation and volume inversion in n-channel SOI MOSFET´s

Author

Venkatesan, S. ; Neudeck, Gerold W. ; Pierret, Robert F.

Author_Institution

Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA

Volume

13

Issue

1

fYear

1992

Firstpage

44

Lastpage

46

Abstract

The effects of volume inversion in thin-film short-channel SOI MOSFETs and the efficacy of dual-gate operation in enhancing their device performance have been analyzed using two-dimensional device simulations and one-dimensional analytical computations. The analyses have been restricted to the strong inversion regime, which is the practically useful region of operation of the SOI MOSFETs. In this region, the analyses suggest that when compared at constant V/sub G/-V/sub T/ values, the dual-channel volume inverted devices do not offer significant current-enhancement advantage, other than that expected from the second channel, over the conventional single-channel devices for silicon thicknesses in the 0.1- mu m range.<>

Keywords

insulated gate field effect transistors; semiconductor-insulator boundaries; thin film transistors; 0.1 micron; SOI MOSFETs; n-channel MOSFETs; one-dimensional analytical computations; short channel MOSFETs; strong inversion regime; thin film MOSFETs; two-dimensional device simulations; volume inversion; Analytical models; Computational modeling; Electrons; MOSFET circuits; Performance analysis; Scattering; Semiconductor thin films; Silicon; Thin film devices; Transconductance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.144946

Filename

144946