• DocumentCode
    909578
  • Title

    Noise measurements of silicon planar microwave transistors in the frequency range 4--8 GHz

  • Author

    Kotyczka, W. ; Strutt, M.J.O.

  • Author_Institution
    Swiss Federal Institute of Technology, Department of Advanced Electrical Engineering, Zÿrich, Switzerland
  • Volume
    6
  • Issue
    15
  • fYear
    1970
  • Firstpage
    478
  • Lastpage
    479
  • Abstract
    The noise figure as a function of the reflection coefficient of the source and of the collector current has been measured. The four fundamental noise parameters in the frequency range 4--8 GHz have been determined.
  • Keywords
    bipolar transistors; microwave devices; noise;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19700335
  • Filename
    4234833