DocumentCode
909578
Title
Noise measurements of silicon planar microwave transistors in the frequency range 4--8 GHz
Author
Kotyczka, W. ; Strutt, M.J.O.
Author_Institution
Swiss Federal Institute of Technology, Department of Advanced Electrical Engineering, Zÿrich, Switzerland
Volume
6
Issue
15
fYear
1970
Firstpage
478
Lastpage
479
Abstract
The noise figure as a function of the reflection coefficient of the source and of the collector current has been measured. The four fundamental noise parameters in the frequency range 4--8 GHz have been determined.
Keywords
bipolar transistors; microwave devices; noise;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19700335
Filename
4234833
Link To Document