GaAs n⁺ ip^{+ in⁺ barrier transistor with ultra-thin p⁺AlGaAs base prepared by molecular beam epitaxy}

Author

Liu, W.C. ; Wang, Y.H. ; Chang, C.Y. ; Liao, S.A.

Author_Institution

National Cheng Kung University, Institute of Electrical and Computer Engineering, Semiconductor and System Laboratories, Tainan, Republic of China

Volume

133

Issue

2

fYear

1986

fDate

4/1/1986 12:00:00 AM

Firstpage

47

Lastpage

48

Abstract

A GaAs n⁺ ip^{+ in⁺ bulk barrier transistor with an ultra-thin p⁺Al_0.2Ga_0.8 As base was fabricated by molecular beam epitaxy. It is found that the barrier height can be modified by the ΔE_c for the conduction band barrier and by the ΔE_v for the valence band barrier, in addition to the planar doped bulk barrier. Both the base-emitter bias voltage and the incident light intensity can modulate the collector current.}

Keywords

III-V semiconductors; bipolar transistors; gallium arsenide; molecular beam epitaxial growth; semiconductor growth; GaAs n+ iÂ¿ p+ i n+ barrier transistor; barrier height; base-emitter bias voltage; bipolar transistor; collector current; conduction band barrier; incident light intensity; molecular beam epitaxy; planar doped bulk barrier; ultra-thin p+ AlGaAs base; valence band barrier; Semiconductor devices and materials, Epitaxy;

fLanguage

English

Journal_Title

Solid-State and Electron Devices, IEE Proceedings I

Publisher

iet

ISSN

0143-7100

Type

jour

DOI

10.1049/ip-i-1.1986.0010

Filename

4644087

GaAs n+ ip+ in+ barrier transistor with ultra-thin p+AlGaAs base prepared by molecular beam epitaxy

Liu, W.C. ; Wang, Y.H. ; Chang, C.Y. ; Liao, S.A.

jour

GaAs n⁺ ip^{+ in⁺ barrier transistor with ultra-thin p⁺AlGaAs base prepared by molecular beam epitaxy}