DocumentCode
909620
Title
Quantitative model for epitaxial-transistor collector characteristics
Author
Hahn, L.A. ; Ashley, K.L.
Author_Institution
Texas Instruments Inc., Dallas, USA
Volume
6
Issue
15
fYear
1970
Firstpage
485
Lastpage
487
Abstract
A 1-dimensional transistor model is presented which characterises the variation of collector resistance with two parameters. The mode assumes that lifetime varies inversely with injection level. Calculated collector characteristics and hFE against collector-current curves are compared with experimental results.
Keywords
bipolar transistors; semiconductor device models;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19700339
Filename
4234837
Link To Document