Title :
High-saturation-current charge-compensated InGaAs-InP uni-traveling-carrier photodiode
Author :
Ning Li ; Xiaowei Li ; Demiguel, S. ; Xiaoguang Zheng ; Campbell, J.C. ; Tulchinsky, D.A. ; Williams, K.J. ; Isshiki, T.D. ; Kinsey, G.S. ; Sudharsansan, R.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Texas, Austin, TX, USA
fDate :
3/1/2004 12:00:00 AM
Abstract :
Charge compensation is utilized in an InGaAs-InP uni-traveling-carrier photodiode to mitigate the space-charge effect. A 20-μm-diameter photodiode achieved a bandwidth of 25 GHz and large-signal 1-dB compression current greater than 90 mA; the output power at 20 GHz was 20 dBm. A smaller /spl sim/100-μm2 photodiode exhibited a bandwidth of 50 GHz and large-signal 1-dB compression current greater than 50 mA. The maximum RF output power at 40 GHz was 17 dBm.
Keywords :
III-V semiconductors; charge compensation; gallium arsenide; indium compounds; micro-optics; microwave photonics; optical communication equipment; photodetectors; photodiodes; 1-dB compression current; 20 GHz; 20 mum; 20-/spl mu/m-diameter photodiode; 40 GHz; InGaAs-InP; RF output power; charge compensation; charge-compensated InGaAs-InP photodiode; high-saturation-current photodiode; space-charge effect; unitraveling-carrier photodiode; Bandwidth; Indium phosphide; Optical receivers; Photoconductivity; Photodetectors; Photodiodes; Photonics; Power generation; Radio frequency; Space charge;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2004.823773
