A 200 GHz Monolithic Integrated Power Amplifier in Metamorphic HEMT Technology

Author

Kallfass, I. ; Pahl, P. ; Massler, H. ; Leuther, A. ; Tessmann, A. ; Koch, S. ; Zwick, T.

Author_Institution

Fraunhofer Inst. for Appl. Solid-State Phys. (IAF), Freiburg

Volume

19

Issue

6

fYear

2009

fDate

6/1/2009 12:00:00 AM

Firstpage

410

Lastpage

412

Abstract

A millimeter-wave monolithic integrated circuit power amplifier operating in the frequency range between 186 and 212 GHz is presented. The amplifier, dedicated to high-resolution imaging radar and communication systems, is realized in a 100 nm gate length metamorphic high electron mobility transistor technology. The three-stage design with four parallel transistors in the output stage achieves a linear gain of more than 12 dB and provides a saturated output power of more than 9 dBm and 7 dBm at 192 and 200 GHz, respectively.

Keywords

MMIC power amplifiers; high electron mobility transistors; millimetre wave power amplifiers; communication systems; frequency 186 GHz to 212 GHz; high-resolution imaging radar; metamorphic HEMT technology; metamorphic high electron mobility transistor technology; millimeter-wave monolithic integrated power amplifier; size 100 nm; G-band; mHEMT; millimeter-wave field effect transistor (FET) integrated circuits (ICs); millimeter-wave power amplification; monolithic microwave integrated circuits (MMICs);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2009.2020042

Filename

4967843