Title :
Experimental study of InGaAs-InP MQW electro-absorption modulators
Author :
Guy, D.R.P. ; Besgrove, D.D. ; Taylor, L.L. ; Apsley, N. ; Bass, S.J.
Author_Institution :
R. Signals & Radar Establ., Malvern, UK
Abstract :
Modulation characteristics of lattice-matched InGaAs-InP MQW structures containing 50 and 150 wells are compared. A contrast ratio of 2.6:1 (4.1 dB) has been attained at 1590 nm (4.9 dB insertion loss) in a 150 well sample. This is the largest perpendicular-geometry modulation reported in InGaAs-InP to date. A 46 meV quantum-confined Stark shift has been attained in an applied electric field of 2.5*10/sup 5/ V/cm/sup -1/ in the 50 well sample. This shift is approximately 8 times the exciton binding energy, and is larger than any previously reported in InGaAs-InP.<>
Keywords :
III-V semiconductors; Stark effect; electroabsorption; gallium arsenide; indium compounds; optical modulation; 1590 nm; 46 meV; III-V semiconductors; InGaAs-InP; MQW electro-absorption modulators; exciton binding energy; insertion loss; quantum-confined Stark shift; Electroabsorption; Gallium compounds; Indium compounds; Optical modulation; Stark effect;
Journal_Title :
Optoelectronics, IEE Proceedings J
